Product Summary
The FS150R12KT3 is an IGBT module.
Parametrics
FS150R12KT3 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)DC-collector current: 150/200A; (3)Repetitive peak colleactor current: 300A; (4)Total power dissipation: 700W; (5)Gate-emitter peak voltage: +/-20V.
Features
FS150R12KT3 characteristics: (1)Collector-emitter saturation voltage: 2.15V; (2)Gate threshold voltage: 6.5V; (3)Gate charge: 1.40μC; (4)Internal gate resistor: 5.0Ω; (5)Input capacitance: 10.5nF; (6)Reverse transfer capacitance: 0.40nF; (7)Collector-emitter cut-off current: 5.0mA; (8)Gate-emitter leakage current: 400mA.
Diagrams
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![]() FS150R12KT3 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 200A |
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![]() FS1501-7R |
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![]() EURO-CASSETTE 100W 15V |
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![]() FS150R06KE3 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT MODULES 600V |
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![]() FS150R12KE3 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 150A FL BRIDGE |
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![]() FS150R12KE3G |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 150A 3-PHASE |
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![]() FS150R12KT3 |
![]() Infineon Technologies |
![]() IGBT Modules N-CH 1.2KV 200A |
![]() Data Sheet |
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![]() FS150R12KT4 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT MODULE 1200V, 150A |
![]() Data Sheet |
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