Product Summary

The BTS6163D is a N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.

Parametrics

Absolute maximum ratings: (1)Supply voltage: 62 V; (2)Supply voltage for full short circuit protection: 48 V; (3)Load dump protection VLoadDump = UA + Vs, UA = 24 V; (4)RI= 2 Ω, RL= 4.4 Ω, td= 400 ms, IN= low or high: 70 V; (5)Load current: self-limited A; (6)Operating temperature range: -40 to +150 ℃; (7)Storage temperature range: -55 to +150 ℃; (8)Power dissipation: 59 W; (9)Inductive load switch-off energy dissipation, single pulse IL = 20 A, Vbb= 24V Tj=150 ℃: 0.25 J; (10)Electrostatic discharge capability (ESD): 3.0 kV; (11)Current through input pin (DC): +15, -120 mA; (12)Current through current sense pin (DC): +15, -120 mA.

Features

Features: (1)Short circuit protection with latch; (2)Current limitation; (3)Overload protection; (4)Thermal shutdown with restart; (5)Overvoltage protection (including load dump); (6)Loss of ground protection; (7)Loss of Vbb protection (with external diode for charged inductive loads); (8)Very low standby current; (9)Fast demagnetization of inductive loads; (10)Electrostatic discharge (ESD) protection; (11)Optimized static electromagnetic compatibility (EMC); (12)Green Product (RoHS compliant); (13)AEC qualified.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BTS6163D
BTS6163D

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Data Sheet

0-1790: $1.38
1790-2500: $1.31
2500-5000: $1.25
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BTS610L1
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