Product Summary

The BPW41N is a high speed and high sensitive PIN photodiode in a flat side view plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters. The large active area combined with a flat case gives a high sensitivity at a wide viewing angle. The BPW41N is suitable for High speed photo detector.

Parametrics

BPW41N absolute maximum ratings: (1)Reverse Voltage, VR: 60 V; (2)Power Dissipation, Tamb: 215 mW; (3)Junction Temperature, Tj: 100℃; (4)Storage Temperature Range, Tstg: –55 to +100℃; (5)Soldering Temperature, Tsd: 260℃; (6)Thermal Resistance Junction/Ambient, RthJA: 350 K/W.

Features

BPW41N features: (1)Large radiant sensitive area (A=7.5 mm2); (2)Wide angle of half sensitivity φ = ± 65℃; (3)High radiant sensitivity; (4)Fast response times; (5)Small junction capacitance; (6)Plastic case with IR filter (λ=950 nm); (7)Suitable for near infrared radiation.

Diagrams

BPW41N dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BPW41N
BPW41N
Vishay Semiconductors
Photodiodes 60V 215mW 950nm
Data Sheet
0-1: $0.37
1-10: $0.37
10-50: $0.35
50-100: $0.31
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BPW41D
BPW41D
Other

Data Sheet
Negotiable 
BPW41N
BPW41N
Vishay Semiconductors
Photodiodes 60V 215mW 950nm
Data Sheet
0-1: $0.37
1-10: $0.37
10-50: $0.35
50-100: $0.31
BPW43
BPW43
Other

Data Sheet
Negotiable 
BPW46
BPW46
Vishay Semiconductors
Photodiodes 65 Degree 215mW
Data Sheet
0-1: $0.57
1-10: $0.50
10-50: $0.46
50-100: $0.40
BPW46L
BPW46L
Vishay Semiconductors
Photodiodes HS PIN Photo Diode
Data Sheet
Negotiable